Ph.D. Department of Physics and Measurement Technology, Linkoping
Institute of Technology, Materials Physics, Sweden, Sept. 1990.
Licentiate of Engineering Department of Physics and Measurement
Technology, Linkoping Institute of Technology, Sweden, 1987.
Recent Publications
"Incorporation of Accelerated Low-Energy (50-560 eV) In Ions In+ in
Si(100) Films During Growth by Molecular Beam Epitaxy,". with J. Knall,
S.A. Barnett, J.E. Sundgren, L.C. Markert, A. Rockett and J.E. Greene.
J. Appl. Phys, 65, 172, 1989.
"Incorporation Probabilities and Depth Distributions of Coevaporated
Al During Si(100) Molecular Beam Epitaxy," with J. E. Sundgren, J.V.
Hansson, L.C. Markert and J.E. Greene. Thin Solid Films, 184, 61
(1990).
"Epitaxial Growth of Al on Si by Thermal Evaporation in Ultra-High
Vacuum: Growth on Si(100) 2x1 Single Domain and Double Domain Surfaces
at Room Temperature", with G. Radnoczi, J. E. Sundgren and G.V.
Hansson, Surface Sci. 236, 53 (1990).
"Growth of Metastable Ge1-xSnx/Ge Strained Layer Superlattices on
Ge(001)2x1 by Temperature Modulated Molecular Beam Epitaxy", with O.
Gurdal, M. Sardela, J. E. Greene, H.H. Radamson, J. E. Sundgren and
J. V. Hansson, Appl. Phys. Lett. 67, 956 (1995).
"Growth and Characterization of Overlayers Deposited in UHV Using
Thermal and Low-Energy ion Beam," Linkoping Studies in Science and
Technology, Dissertations, No. 235, ISBN 91-7870-697-1.
